Datasheet > SUP60030E

SUP60030E

更新时间： 2024-11-13 14:52:43

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威世 - VISHAY		/
页数	文件大小	规格书
8页	145K
描述
N-Channel 80 V (D-S) MOSFET

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获取价格

数据手册

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SUP60030E 数据手册

SUP60030E

Vishay Siliconix

www.vishay.com

N-Channel 80 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω) MAX.

I_D(A) ^d

120

Q_g(TYP.)

• Maximum 175 °C junction temperature

0.0034 at V_GS= 10 V

0.0036 at V_GS= 7.5 V

• Very low Q_gdreduces power loss from passing

through V_plateau

120

• 100 % R_gand UIS tested

TO-220AB

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Power supply

- Secondary synchronous rectification

• DC/DC converter

• Power tools

• Motor drive switch

• DC/AC inverter

Top View

• Battery management

Ordering Information:

SUP60030E-GE3 (lead (Pb)-free and halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

120 ^d

250

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current (t = 100 μs)

Avalanche Current

I_DM

I_AS

Single Avalanche Energy ^a

L = 0.1 mH

T_C= 25 °C

T_C= 125 °C

E_AS

245

375 ^b

125 ^b

-55 to +175

Maximum Power Dissipation ^a

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient (PCB Mount) ^c

°C/W

Junction-to-Case (Drain)

R_thJC

0.4

Notes

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR4 material).

d. Package limited.

S15-1869-Rev. A, 10-Aug-15

Document Number: 68293

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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