Datasheet > SUP60061EL

SUP60061EL

更新时间： 2024-11-13 14:51:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	142K
描述
P-Channel 80 V (D-S) MOSFET

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SUP60061EL 数据手册

SUP60061EL

Vishay Siliconix

www.vishay.com

P-Channel 80 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

TO-220AB

• Package with low thermal resistance

• Maximum 175 ºC junction temperature

• LowR_DS(on)minimizes power loss from conduction

• Compatible with logic-level gate driving

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

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APPLICATIONS

• Battery protection

• Motor drive control

• Load switch

PRODUCT SUMMARY

V_DS(V)

-80

_DS(on)max. (Ω) at V_GS= -10 V

_DS(on)max. (Ω) at V_GS= -4.5 V

0.0058

0.0081

145

Q_gtyp. (nC)

_D(A)

-150

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free and halogen-free

SUP60061EL-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-80

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

-150 ^d

-250

Continuous drain current ^d

(T_J= 175 °C)

I_D

Pulsed drain current (100 μs)

Avalanche current

Single pulse avalanche energy ^a

I_DM

I_AS

-75

L = 0.1 mH

E_AS

281

_C= 25 °C ^c

375

Power dissipation

P_D

T_C= 125 °C ^b

125

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

Junction-to-case

R_thJC

0.4

Notes

a. Duty cycle ≤ 1 %

b. When mounted on 1" square PCB (FR4 material)

c. See SOA curve for voltage derating

d. Limited by package

S23-0595-Rev. B, 31-Jul-2023

Document Number: 63020

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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