Datasheet > SUP53P06-20

SUP53P06-20

更新时间： 2024-11-12 06:14:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	135K
描述
P-Channel 60-V (D-S) MOSFET

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SUP53P06-20 数据手册

New Product

SUP53P06-20

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

- 53

•

100 % UIS Tested

RoHS

0.0195 at V_GS= - 10 V

0.025 at V_GS= - 4.5 V

COMPLIANT

- 60

76 nC

- 42

APPLICATIONS

Load Switch

•

TO-220AB

DRAIN connected to TAB

G D

Top View

Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 53^a

- 46.8

9.2^b

- 8.1^b

- 150

- 45

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_AS

Pulsed Drain Current

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

101

69^a

2.1^b

104.2^a

66.7^a

3.1^b

_C= 25 °C

T_A= 25 °C

_C= 25 °C

I_S

Continuous Source-Drain Diode Current

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

2.0^b

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^b

Maximum Junction-to-Case

Symbol

R_thJA

Typical

Maximum

Unit

Steady State

°C/W

R_thJC

0.98

1.2

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

Document Number: 68633

S-80897-Rev. A, 21-Apr-08

www.vishay.com

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