是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | ROHS COMPLIANT, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 1.68 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 222422 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | Transistor |
Samacsys Package Category: | Transistor Outline, Vertical | Samacsys Footprint Name: | TO-220 |
Samacsys Released Date: | 2015-07-28 08:42:45 | Is Samacsys: | N |
雪崩能效等级(Eas): | 230 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 160 W | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STW40NF20 | STMICROELECTRONICS |
完全替代 |
N-channel 200V - 0.038ヘ -40A- D2PAK/TO-220/TO | |
STB40NF20 | STMICROELECTRONICS |
类似代替 |
N-channel 200V - 0.038ヘ -40A- D2PAK/TO-220/TO | |
STB40N20 | STMICROELECTRONICS |
类似代替 |
N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP40NS15 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH O | |
STP413D | STANSON |
获取价格 |
TO-251/TO-252 | |
STP42N60M2-EP | STMICROELECTRONICS |
获取价格 |
N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSF | |
STP42N65DM5 | STMICROELECTRONICS |
获取价格 |
33A, 650V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | |
STP42N65M5 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V, 0.070 Ω, 33 A MDmesh⢠V P | |
STP432S | SAMHOP |
获取价格 |
N-Channel Logic Enhancement Mode Field Effect Transistor | |
STP434S | SAMHOP |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
STP43N60DM2 | STMICROELECTRONICS |
获取价格 |
N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET | |
STP4403 | STANSON |
获取价格 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produce | |
STP4407 | STANSON |
获取价格 |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produ |