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STP40NF03L PDF预览

STP40NF03L

更新时间: 2024-09-12 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 84K
描述
N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET

STP40NF03L 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:7.89其他特性:LOW THRESHOLD
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):40 A
最大漏源导通电阻:0.035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP40NF03L 数据手册

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STP40NF03L  
N - CHANNEL 30V - 0.020 - 40A TO-220  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP40NF03L  
30 V  
< 0.022 Ω  
40 A  
TYPICAL RDS(on) = 0.020 Ω  
LOW THRESHOLD DRIVE  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
3
2
1
TO-220  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
30  
± 20  
40  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
28  
A
IDM  
(
Drain Current (pulsed)  
160  
A
)  
o
Ptot  
Total Dissipation at Tc = 25 C  
70  
W
Derating Factor  
0.46  
250  
W/oC  
m/J  
oC  
oC  
EAS(1) Single Pulse Avalanche Energy  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
() Pulse width limitedby safe operating area  
175  
( 1) starting Tj = 25 oC, ID =20A , VDD = 15V  
1/8  
October 1999  

STP40NF03L 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP5NK100Z STMICROELECTRONICS

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N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STP55NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

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