Datasheet > STD35NF06L

STD35NF06L

更新时间： 2024-11-09 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	1175K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:35A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@10V

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STD35NF06L 数据手册

UMW

STD35NF06

60V N-Channel Enhancement Mode Power MOSFET

General Description

The STD35NF06 uses advanced trench technology and

design to provide excellent RDS(ON) wi th low ga te cha rg

e. It ca n be used in a wide variety of applications.

Features

VDS = 60V,ID =35A

RDS(ON),20mΩ(Typ) @ VGS =10V

RDS(ON),16mΩ(Typ) @ VGS =4.5V

Advanced Trench Technology

Excellent RDS(ON) and Low Gate Charge

Lead free product is acquired

Application

Load Switch

PWM Application

Power management

Absolute Maximum Ratings(TA=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

TC=25℃

Drain Current-Continuous^Note3

TC=100℃

Drain Current-Pulsed^Note1

I_DM

E_AS

P_D

140

Avalanche Energy^Note4

℃

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

TC=25℃

105

T_STG

T_J

-55 to +150

℃

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

Thermal Resistance,Junction-to-Case

1.4

℃/W

θJC

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