STB25NM60NX

更新时间： 2024-11-02 06:14:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	579K
描述
N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

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中文翻译

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数据手册

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STB25NM60NX 数据手册

STB25NM60Nx - STF25NM60N

STP25NM60N - STW25NM60N

N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET

TO-220, TO-220FP, I²PAK, D²PAK, TO-247

Features

V_DSS

(@Tjmax)

R_DS(on)

max

Type

I_D

STB25NM60N

STB25NM60N-1

STF25NM60N

STP25NM60N

STW25NM60N

650 V

< 0.160 Ω

< 0.160 Ω 21 A⁽¹⁾

21 A

TO-220

TO-220FP

< 0.160 Ω

21 A

D²PAK

1. Limited only by maximum temperature allowed

TO-247

■ 100% avalanche tested

I²PAK

■ Low input capacitance and gate charge

■ Low gate input resistance

Figure 1.

Internal schematic diagram

Application

■ Switching applications

Description

This series of devices is realized with the second

generation of MDmesh™ technology. This

revolutionary MOSFET associates a new vertical

structure to the company’s strip layout to yield one

of the world’s lowest on-resistance and gate

charge. It is therefore suitable for the most

demanding high efficiency converters

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STB25NM60N

STB25NM60N-1

STF25NM60N

STP25NM60N

STW25NM60N

B25NM60N

F25NM60N

P25NM60N

W25NM60N

Tape and reel

Tube

I²PAK

TO-220FP

TO-220

Tube

TO-247

Tube

June 2008

Rev 12

1/18

www.st.com

12 3 4 5 6 7...18

中文翻译

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