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STB28N65M2 PDF预览

STB28N65M2

更新时间: 2024-11-24 14:57:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
22页 1235K
描述
N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET,D2PAK封装

STB28N65M2 数据手册

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STB28N65M2, STF28N65M2,  
STP28N65M2, STW28N65M2  
N-channel 650 V, 0.15 typ., 20 A MDmesh™ M2 Power MOSFETs  
in D²PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet  
-
preliminary data  
Features  
TAB  
Order codes  
VDS  
RDS(on) max  
ID  
STB28N65M2  
STF28N65M2  
STP28N65M2  
STW28N65M2  
3
3
1
2
650 V  
0.18  
20 A  
1
D2PAK  
TO-220FP  
TAB  
Extremely low gate charge  
Excellent output capacitance (Coss) profile  
100% avalanche tested  
3
3
2
2
1
1
Zener-protected  
TO-220  
TO-247  
Applications  
Figure 1. Internal schematic diagram  
, TAB  
Switching applications  
Description  
These devices are N-channel Power MOSFETs  
developed using MDmesh™ M2 technology.  
Thanks to their strip layout and improved vertical  
structure, the devices exhibit low on-resistance  
and optimized switching characteristics, rendering  
them suitable for the most demanding high  
efficiency converters.  
AM15572v1  
Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STB28N65M2  
STF28N65M2  
STP28N65M2  
STW28N65M2  
D2PAK  
TO-220FP  
TO-220  
Tape and reel  
28N65M2  
Tube  
TO-247  
December 2014  
DocID027256 Rev 1  
1/22  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  

STB28N65M2 替代型号

型号 品牌 替代类型 描述 数据表
STP28N65M2 STMICROELECTRONICS

完全替代

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