Datasheet > STB30N80K5

STB30N80K5

更新时间： 2023-12-20 18:45:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	936K
描述
N沟道800 V、0.15 Ohm典型值、24 A MDmesh K5功率MOSFET，D2PAK封装

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STB30N80K5 数据手册

STB30N80K5

N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5

Power MOSFET in a D²PAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STB30N80K5

800 V

0.18 Ω

24 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

D²

PAK

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packaging

STB30N80K5

30N80K5

D²PAK

Tape and reel

July 2016

DocID028737 Rev 2

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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