Datasheet > STB33N60DM2

STB33N60DM2

更新时间： 2024-10-02 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	554K
描述
N沟道600 V、0.110 Ohm典型值、24 A MDmesh DM2功率MOSFET，D2PAK封装

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STB33N60DM2 数据手册

STB33N60DM2, STP33N60DM2, STW33N60DM2

Datasheet

N-channel 600 V, 110 mΩ typ., 24 A MDmesh DM2

Power MOSFET in D²PAK, TO‑220 and TO‑247 packages

TAB

Features

@ T

DS(on)

max.

Order code

Jmax.

STB33N60DM2

D²PAK

TAB

STP33N60DM2

650 V

130 mΩ

24 A

STW33N60DM2

•

Fast-recovery body diode

TO-220

TO-247

Extremely low gate charge and input capacitance

Low on-resistance

D(2, TAB)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast

recovery diode series. They offer very low recovery charge (Q_rr) and time (t_rr)

combined with low R_DS(on), rendering them suitable for the most demanding high

efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STB33N60DM2

STP33N60DM2

STW33N60DM2

DS10564 - Rev 3 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...20

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