Datasheet > STB34NM60ND

STB34NM60ND

更新时间： 2024-11-02 12:26:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
22页	1163K
描述
N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

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中文翻译

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数据手册
替代型号

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STB34NM60ND 数据手册

STB34NM60ND, STF34NM60ND,

STP34NM60ND, STW34NM60ND

N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET

(with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247

Datasheet — production data

Features

TAB

V_DSS@T_J

max.

R_DS(on)

max.

Order codes

I_D

STB34NM60ND

STF34NM60ND

STP34NM60ND

STW34NM60ND

650 V

0.110 Ω

29 A

D PAK

TO-220FP

TAB

■ The world’s best R_DS(on)in TO-220 amongst

the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

TO-220

TO-247

■ Extremely high dv/dt and avalanche

capabilities

Figure 1.

Internal schematic diagram

Applications

■ Switching applications

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Description

These FDmesh™ II Power MOSFETs with

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

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Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STB34NM60ND

STF34NM60ND

STP34NM60ND

STW34NM60ND

34NM60ND

Tape and reel

Tube

TO-220FP

TO-220

Tube

TO-247

Tube

October 2012

Doc ID 18099 Rev 5

1/22

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...22

中文翻译

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STB34NM60ND 替代型号

型号	品牌	替代类型	描述	数据表
IPB60R099CPATMA1	INFINEON	功能相似	Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Me

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