STB3NC90

更新时间： 2024-02-24 19:06:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	421K
描述
N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STB3NC90 数据手册

STB3NC90Z

N-CHANNEL 900V - 3.2Ω - 3.5A D PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

DSS

DS(on)

STB3NC90

900V

< 3.5Ω

3.5 A

■

TYPICAL R (on) = 3.2Ω

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

■

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

D PAK

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

900

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

900

DGR

Gate- source Voltage

± 25

3.5

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

2.2

(●)

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

100

Derating Factor

0.8

W/°C

V/ns

°C

Gate-source Current (*)

±50

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Storage Temperature

2.5

ESD(G-S)

dv/dt

stg

–65 to 150

150

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I ≤3.5A, di/dt ≤100A/µs, V

≤ V , T ≤ T

(BR)DSS j JMAX

(*) Limited only by maximum temperature allowed

May 2001

1/9

12 3 4 5 6 7...9

中文翻译

下载PDF

与STB3NC90相关器件

型号	品牌	获取价格	描述	数据表
STB3NC90Z	STMICROELECTRONICS	获取价格	N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Prot
STB3NC90Z-1	STMICROELECTRONICS	获取价格	N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220F
STB3NC90ZT4	STMICROELECTRONICS	获取价格	3.5A, 900V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
STB3NK60Z	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PA
STB3NK60ZT4	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PA
STB4080CTR	ETC	获取价格	DIODE ARRAY SCHOTTKY 80V D2PAK
STB40N20	STMICROELECTRONICS	获取价格	N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET
STB40N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，
STB40NE03L20	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-263AB
STB40NE03L-20	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE