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STB3NC60T4 PDF预览

STB3NC60T4

更新时间: 2024-11-01 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
9页 107K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB

STB3NC60T4 数据手册

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STB3NC60  
2
2
N - CHANNEL 600V - 3.3- 3A - D PAK/I PAK  
PowerMESH ΙΙ MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB3NC60  
600 V  
< 3.6 Ω  
3 A  
ν
ν
ν
ν
ν
TYPICAL RDS(on) = 3.3 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
1
3
2
1
DESCRIPTION  
I2PAK  
TO-262  
(Suffix ”-1”)  
D2PAK  
TO-263  
The PowerMESH II is the evolution of the first  
generation of MESH OVERLAY . The layout  
refinements introduced greatly improve the  
Ron*area figure of merit while keeping the device  
at the leading edge for what concerns switching  
speed, gate charge and ruggedness.  
(Suffix ”T4”)  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
ν
ν
ν
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
600  
V
V
VDGR  
VGS  
ID  
600  
± 30  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
3
A
ID  
1.9  
A
I
DM()  
12  
A
Ptot  
Total Dissipation at Tc = 25 oC  
80  
0.64  
W
Derating Factor  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
4
Tstg  
Tj  
Storage Temperature  
-65 to 150  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD 3A, di/dt 100 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/9  
February 2000  

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