Datasheet > STB416D

STB416D

更新时间： 2024-11-02 21:09:47

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
11页	268K
描述
Transistor

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STB416D 数据手册

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Product

STB416D

Ver 1.0

S mHop Microelectronics Corp.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel)

PRODUCT SUMMARY (P-Channel)

RDS(ON) (mΩ) Max

VDSS

28 @ VGS=10V

43 @ VGS=4.5V

36 @ VGS=-10V

61 @ VGS=-4.5V

18A

40V

-16A

-40V

D1/D2

P-ch

S 2

S 1

N-ch

STB SERIES

TO-263 5L

ABSOLUTE MAXIMUM RATINGS T_C=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

N-Channel P-Channel

Drain-Source Voltage

Gate-Source Voltage

-40

V_GS

T_C=25 C

-16

Drain Current-Continuous ^a

I_D

T_C=70 C

14.4

-12.8

-40

I_DM

-Pulsed

Sigle Pulse Avalanche Energy ^d

E_AS

T_C=25 C

15.6

Maximum Power Dissipation ^a

P_D

T_C=70 C

Operating Junction and Storage

Temperature Range

°C

T_J^,T_STG

-55 to 150

THERMAL CHARACTERISTICS

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

May,11,2010

www.samhop.com.tw

12 3 4 5 6 7...11

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