Datasheet > STB45N50DM2AG

STB45N50DM2AG

更新时间： 2024-09-13 14:57:27

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
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描述
汽车级N沟道500 V、0.07 Ohm典型值、35 A MDmesh DM2功率MOSFET，D2PAK封装

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中文翻译

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技术参数
数据手册

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STB45N50DM2AG 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	2.11	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STB45N50DM2AG 数据手册

STB45N50DM2AG

Automotive-grade N-channel 500 V, 0.07 Ω typ., 35 A

MDmesh™ DM2 Power MOSFET in a D²PAK package

Datasheet - production data

Features

R_DS(on)

Order code

V_DS

I_D

P_TOT

TAB

max.

STB45N50DM2AG 500 V 0.084 Ω 35 A 250 W



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode

Extremely low gate charge and input

capacitance

D PAK



Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB45N50DM2AG

45N50DM2

D²PAK

Tape and reel

October 2015

DocID028417 Rev 1

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

中文翻译

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