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STB46NF30 PDF预览

STB46NF30

更新时间: 2024-09-14 14:58:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
20页 996K
描述
N沟道300 V、0.063 Ohm典型值、42 A STripFET(TM) II功率MOSFET,D2PAK封装

STB46NF30 技术参数

生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:2.11配置:Single
最大漏极电流 (Abs) (ID):42 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
最高工作温度:175 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STB46NF30 数据手册

 浏览型号STB46NF30的Datasheet PDF文件第2页浏览型号STB46NF30的Datasheet PDF文件第3页浏览型号STB46NF30的Datasheet PDF文件第4页浏览型号STB46NF30的Datasheet PDF文件第5页浏览型号STB46NF30的Datasheet PDF文件第6页浏览型号STB46NF30的Datasheet PDF文件第7页 
STB46NF30, STP46NF30,  
STW46NF30  
N-channel 300 V, 0.063 Ω typ., 42 A STripFET™ II  
Power MOSFETs in D²PAK, TO-220 and TO-247 packages  
Datasheet - production data  
TAB  
Features  
PW  
Order code  
STB46NF30  
STP46NF30  
STW46NF30  
VDSS  
RDS(on) max.  
ID  
300 W  
300 V  
< 0.075 Ω  
42 A  
D2PAK  
TAB  
Exceptional dv/dt capability  
100% avalanche tested  
Low gate charge  
3
3
2
2
TO-220  
TO-247  
1
1
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
Description  
D(2, TAB)  
These Power MOSFETs have been developed  
using STMicroelectronics’ unique STripFET  
process, which is specifically designed to  
minimize input capacitance and gate charge. This  
renders the devices suitable for use as primary  
switch in advanced high-efficiency isolated DC-  
DC converters for telecom and computer  
applications, and applications with low gate  
charge driving requirements.  
G(1)  
S(3)  
AM01475v1_Tab  
Table 1: Device summary  
Order code  
STB46NF30  
STP46NF30  
STW46NF30  
Marking  
Package  
D²PAK  
Packing  
Tape and reel  
46NF30  
TO-220  
TO-247  
Tube  
August 2016  
DocID018493 Rev 2  
1/20  
www.st.com  
This is information on a product in full production.  

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