Datasheet > STB47N60DM6AG

STB47N60DM6AG

更新时间： 2024-09-14 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	628K
描述
汽车级N沟道600 V、70 mOhm典型值、36 A MDmesh DM6功率MOSFET，D2PAK封装

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STB47N60DM6AG 数据手册

STB47N60DM6AG

Datasheet

Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6

Power MOSFET in a D²PAK package

Features

TAB

DS(on)

max.

Order code

STB47N60DM6AG

600 V

80 mΩ

36 A

•

AEC-Q101 qualified

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

D²

PAK

Low gate charge, input capacitance and resistance

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01475V1

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB47N60DM6AG

Product summary

Order code

Marking

STB47N60DM6AG

47N60DM6

Package

Packing

D²PAK

Tape and reel

DS12070 - Rev 4 - March 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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