Datasheet > STB45NF3LLT4

STB45NF3LLT4

更新时间： 2024-11-28 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	159K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 45A I(D) \| TO-263AB

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STB45NF3LLT4 数据手册

STB45NF3LL

N-CHANNEL 30V - 0.014

Ω - 45A D PAK

STripFET II POWER MOSFET

TYPE

DS(on)

DSS

STB45NF3LL

30V

<0.018Ω

45A

■

TYPICAL R (on) = 0.016Ω @4.5V

OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronics unique

“Single Feature Size ” strip-based process. The

resulting transistor shows the best trade-off be-

tween on-resistance ang gate charge. When used

as high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

D PAK

ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 16

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(●)

Drain Current (pulsed)

180

Total Dissipation at T = 25°C

TOT

Derating Factor

0.46

241

W/°C

(1)

Single Pulse Avalanche Energy

Storage Temperature

stg

– 55 to 175

°C

Max. Operating Junction Temperature

(●) Pulse width limited by safe operating area

(1) Starting T = 25°C, I = 22.5A, V = 24V

j D DD

October 2001

1/9

12 3 4 5 6 7...9

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