Datasheet > STB46N60M6

STB46N60M6

更新时间： 2024-09-14 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	663K
描述
N沟道600 V、68 mOhm典型值、36 A MDmesh M6功率MOSFET，D2PAK封装

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STB46N60M6 数据手册

STB46N60M6

Datasheet

N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6

Power MOSFET in a D²PAK package

Features

TAB

DS(on)

max.

Order code

STB46N60M6

600 V

80 mΩ

36 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

D²

PAK

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

LLC converters

Boost PFC converters

S(3)

AM01475V1

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STB46N60M6

Product summary

Order code

Marking

STB46N60M6

46N60M6

Package

Packing

D²PAK

Tape and reel

DS12965 - Rev 2 - November 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...19

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