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STB45N60DM2AG PDF预览

STB45N60DM2AG

更新时间: 2024-09-13 14:58:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 400K
描述
汽车级N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET,D2PAK封装

STB45N60DM2AG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:1.71雪崩能效等级(Eas):800 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):34 A
最大漏源导通电阻:0.093 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):136 A参考标准:AEC-Q101
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB45N60DM2AG 数据手册

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STB45N60DM2AG  
Datasheet  
Automotive-grade N-channel 600 V, 85 mΩ typ., 34 A MDmesh DM2  
Power MOSFET in a D²PAK package  
Features  
TAB  
V
@ T max.  
R
max.  
I
P
TOT  
Order code  
DS  
J
DS(on)  
D
STB45N60DM2AG  
650 V  
93 mΩ  
34 A  
250 W  
2
1
3
AEC-Q101 qualified  
D²PAK  
Fast-recovery body diode  
Extremely low gate charge and input capacitance  
Low on-resistance  
D(2, TAB)  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
G(1)  
Applications  
S(3)  
AM01476v1_tab  
Switching applications  
Description  
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-  
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined  
with low RDS(on), rendering it suitable for the most demanding high-efficiency  
converters and ideal for bridge topologies and ZVS phase-shift converters.  
Product status link  
STB45N60DM2AG  
Product summary  
Order code  
Marking  
STB45N60DM2AG  
45N60DM2  
Package  
Packing  
D²PAK  
Tape and reel  
DS11105 - Rev 2 - August 2021  
For further information contact your local STMicroelectronics sales office.  
www.st.com  
 

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