Datasheet > STB45NF06LT4

STB45NF06LT4

更新时间： 2024-11-28 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	157K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 38A I(D) \| TO-263AB

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STB45NF06LT4 数据手册

STB45NF06L

N-CHANNEL 60V - 0.022

Ω - 38A D PAK

STripFET II POWER MOSFET

TYPE

DS(on)

DSS

STB45NF06L

60V

<0.028Ω

38A

■

TYPICAL R (on) = 0.022Ω

EXCEPTIONAL dv/dt CAPABILITY

LOGIC LEVEL GATE DRIVE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique “Single Feature

Size ” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

D PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH-EFFICIENCY DC-DC CONVERTERS

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

±16

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(●)

Drain Current (pulsed)

152

Total Dissipation at T = 25°C

TOT

Derating Factor

0.53

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–55 to 175

°C

Max. Operating Junction Temperature

(1) I ≤38A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

(●) Pulse width limited by safe operating area

October 2001

1/9

12 3 4 5 6 7...9

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