Datasheet > STB434S

STB434S

更新时间： 2024-02-20 23:41:14

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	232K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STB434S 数据手册

STB/P434S

Ver 1.0

S mHop Microelectronics Corp.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

RDS(ON) (mΩ) Max

VDSS

Rugged and reliable.

9.2 @ VGS=10V

TO-220 and TO-263 Package.

60A

40V

11.5 @ VGS=4.5V

STB SERIES

TO-263(DD-PAK)

STP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

Limit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C=25 C

I_D

Drain Current-Continuous

T_C=70 C

I_DM

176

-Pulsed

E_AS

Sigle Pulse Avalanche Energy

T_C=25 C

62.5

P_D

Maximum Power Dissipation

T_C=70 C

Operating Junction and Storage

Temperature Range

T_J, T_STG

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

°C/W

62.5

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice.

Nov,14,2008

www.samhop.com.tw

12 3 4 5 6 7 8

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