Datasheet > STB438S

STB438S

更新时间： 2024-02-06 04:43:52

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
8页	262K
描述
Transistor

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STB438S 数据手册

Green

Product

STB/P438S

Ver1.0

S mHop Microelectronics Corp.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220 & TO-263 package.

RDS(ON) (m

@ VGS=10V

10 @ VGS=4.5V

Ω) Max

VDSS

60A

40V

S TB S E R IE S

TO-263(DD-PAK)

S TP S E R IE S

TO-220

ABSOLUTE MAXIMUM RATINGS T_C=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

TA=25 C

Drain Current-Continuous ^a

I_D

240

196

TA=70 C

I_DM

-Pulsed

Avalanche Energy ^c

E_AS

TA=25 C

Maximum Power Dissipation ^a

P_D

TA=70 C

Operating Junction and Storage

Temperature Range

°C

T_J, T_STG

-55 to 150

THERMAL CHARACTERISTICS

1.8

Thermal Resistance, Junction-to-Case

°C/W

Thermal Resistance, Junction-to-Ambient

Feb,05,2009

www.samhop.com.tw

12 3 4 5 6 7 8

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