Datasheet > STB432S

STB432S

更新时间： 2024-01-01 15:32:20

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	241K
描述
N-Channel Logic Enhancement Mode Field Effect Transistor

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STB432S 数据手册

STB/P432S

Ver 1.0

S mHop Microelectronics Corp.

N-Channel Logic Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220 & TO-263 package.

RDS(ON) (mΩ) Max

VDSS

9 @ VGS=10V

60A

40V

11 @ VGS=4.5V

S TB S E R IE S

TO-263(DD-PAK)

S TP S E R IE S

TO-220

ABSOLUTE MAXIMUM RATINGS T_C=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

Limit

Drain-Source Voltage

V_GS

Gate-Source Voltage

Drain Current-Continuous^a

I_D

T_C=25 C

I_DM

E_AS

P_D

240

130

62.5

-Pulsed

Sigle Pulse Avalanche Energy ^d

Maximum Power Dissipation ^a

T_C=25 C

Operating Junction and Storage

Temperature Range

°C

T_J, T_STG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

°C/W

Details are subject to change without notice.

Jun,24,2008

www.samhop.com.tw

12 3 4 5 6 7 8

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