Datasheet > STB42N60M2-EP

STB42N60M2-EP

更新时间： 2023-12-20 18:44:31

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSFET，D2PAK封装

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中文翻译

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数据手册

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STB42N60M2-EP 数据手册

STB42N60M2-EP, STP42N60M2-EP,

STW42N60M2-EP

N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP

Power MOSFETs in D²PAK, TO-220 and TO-247 packages

Datasheet - production data

Features

Order code

TAB

V_DS@ T_JmaxR_DS(on)max.

I_D

STB42N60M2-EP

STP42N60M2-EP

STW42N60M2-EP

650 V

0.087 Ω

34 A

D²PAK

TO-220

TAB



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

Very low turn-off switching losses

100% avalanche tested

TO-247

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Tailored for very high frequency converters

(f > 150 kHz)

D(2, TAB)

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 EP enhanced

performance technology. Thanks to their strip

layout and improved vertical structure, the

G(1)

devices exhibit low on-resistance and optimized

switching characteristics with very low turn-off

switching losses, rendering them suitable for the

most demanding very high frequency converters.

S(3)

AM01476v1

Table 1: Device summary

Marking

Order code

Package

Packing

STB42N60M2-EP

STP42N60M2-EP

STW42N60M2-EP

D²PAK

TO-220

TO-247

Tape and reel

42N60M2EP

Tube

November 2017

DocID027327 Rev 2

1/20

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...20

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