Datasheet > STB40NE03L-20T4

STB40NE03L-20T4

更新时间： 2024-11-01 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	104K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STB40NE03L-20T4 数据手册

STB40NE03L-20

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

■

TYPICAL R_DS(on)= 0.014 Ω

EXCEPTIONAL dv/dt CAPABILITY

LOW GATE CHARGE A 100 ^oC

APPLICATION ORIENTED

CHARACTERIZATION

■

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D²PAK

TO-263

(suffix ”T4”)

DESCRIPTION

This Power MOSFET is the latest development of

SGS-THOMSON unique ”Single Feature Size

”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturingreproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

■

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

■

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_DGR

V_GS

I_D

± 15

I_D

_DM(• )

160

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.53

W/^oC

V/ns

^oC

dv/dt(¹) Peak Diode Recovery voltage slope

T_{st g}

Storage Temperature

-65 to 175

T_j

Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

(1) I_SD≤ 40 A,di/dt ≤ 300 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/8

November 1997

12 3 4 5 6 7 8

中文翻译

下载PDF

与STB40NE03L-20T4相关器件

型号	品牌	获取价格	描述	数据表
STB40NF03L	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.020 ohm - 40A D2PAK STripFET POWER MOSFET
STB40NF03LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-263AB
STB40NF10	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET
STB40NF10_07	STMICROELECTRONICS	获取价格	N-channel 100V - 0.025ヘ - 50A - D2PAK Low gat
STB40NF10-1	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/
STB40NF10L	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GAT
STB40NF10LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 40A I(D) \| TO-263AB
STB40NF10T4	STMICROELECTRONICS	获取价格	N-channel 100V - 0.025ヘ - 50A - D2PAK Low gat
STB40NF20	STMICROELECTRONICS	获取价格	N-channel 200V - 0.038ヘ -40A- D2PAK/TO-220/TO
STB40NS15	STMICROELECTRONICS	获取价格	N-CHANNEL 150V - 0.042ohm - 40A D2PAK MESH OV