Datasheet > STB40NF10LT4

STB40NF10LT4

更新时间： 2024-01-23 10:57:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	161K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 40A I(D) \| TO-263AB

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数据手册

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STB40NF10LT4 数据手册

STB40NF10L

N-CHANNEL 100V - 0.028

Ω - 40A D2PAK

LOW GATE CHARGE STripFET POWER MOSFET

TYPE

DS(on)

DSS

STB40NF10L

100 V

< 0.033 Ω

40 A

■

TYPICAL R (on) = 0.028Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

■

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

D2PAK

DESCRIPTION

This Power Mosfet series realized with STMicro-

electronics unique STripFET process has specifical-

ly been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters for Telecom and Computer application. It

is also intended for any application with low gate

charge drive requirements.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH-EFFICIENCY DC-DC CONVERTERS

UPS AND MOTOR CONTROL

AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

100

Unit

Drain-gate Voltage (R = 20 kΩ)

100

DGR

Gate- source Voltage

± 15

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(●)

Drain Current (pulsed)

160

Total Dissipation at T = 25°C

150

TOT

Derating Factor

W/°C

°C

(1)

Single Pulse Avalanche Energy

Storage Temperature

430

stg

–65 to 175

175

Max. Operating Junction Temperature

(●) Pulse width limited by safe operating area

(1) Starting T = 25°C, I = 20A, V = 40V

April 2001

1/9

12 3 4 5 6 7...9

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