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STB40NF10-1 PDF预览

STB40NF10-1

更新时间: 2024-11-01 22:39:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 481K
描述
N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET

STB40NF10-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N雪崩能效等级(Eas):150 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB40NF10-1 数据手册

 浏览型号STB40NF10-1的Datasheet PDF文件第2页浏览型号STB40NF10-1的Datasheet PDF文件第3页浏览型号STB40NF10-1的Datasheet PDF文件第4页浏览型号STB40NF10-1的Datasheet PDF文件第5页浏览型号STB40NF10-1的Datasheet PDF文件第6页浏览型号STB40NF10-1的Datasheet PDF文件第7页 
STP40NF10  
STB40NF10 - STB40NF10-1  
N-CHANNEL 100V - 0.024- 50A TO-220/D2PAK/I2PAK  
LOW GATE CHARGE STripFET™ II POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP40NF10  
STB40NF10  
STB40NF10-1  
100 V  
100 V  
100 V  
< 0.028 Ω  
< 0.028 Ω  
< 0.028 Ω  
50 A  
50 A  
50 A  
3
TYPICAL R (on) = 0.024Ω  
1
DS  
3
2
2
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
D PAK  
1
TO-220  
3
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
2
1
2
I PAK  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
This Power MOSFET series realized with STMicro-  
electronics unique STripFET process has specifical-  
ly been designed to minimize input capacitance and  
gate charge. It is therefore suitable as primary  
switch in advanced high-efficiency isolated DC-DC  
converters for Telecom and Computer application. It  
is also intended for any application with low gate  
charge drive requirements.  
APPLICATIONS  
HIGH-EFFICIENCY DC-DC CONVERTERS  
UPS AND MOTOR CONTROL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
100  
100  
± 20  
50  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I (*)  
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
35  
A
D
C
I
( )  
Drain Current (pulsed)  
200  
150  
1
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
mJ  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
20  
E
(2)  
150  
AS  
T
stg  
– 55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
(1) I 40A, di/dt 600A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
(*) Limited by Package  
(2) Starting T = 25°C, I = 40A, V = 50V  
j
D
DD  
September 2002  
1/11  

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