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STB40NF10 PDF预览

STB40NF10

更新时间: 2024-02-17 19:28:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS
页数 文件大小 规格书
6页 51K
描述
N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET

STB40NF10 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.19雪崩能效等级(Eas):150 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB40NF10 数据手册

 浏览型号STB40NF10的Datasheet PDF文件第2页浏览型号STB40NF10的Datasheet PDF文件第3页浏览型号STB40NF10的Datasheet PDF文件第4页浏览型号STB40NF10的Datasheet PDF文件第5页浏览型号STB40NF10的Datasheet PDF文件第6页 
STB40NF10  
N - CHANNEL 100V - 0.030  
- 40A TO-263  
LOW GATE CHARGE STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on )  
ID  
STB40NF10  
100 V < 0.035 Ω  
40 A  
TYPICAL RDS(on) = 0.030 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
1
D2PAK  
TO-263  
DESCRIPTION  
(Suffix ”T4”)  
This MOSFET series realized with STMicroelec-  
tronics unique STripFET process has specifically  
been designed to minimize input capacitance and  
gate charge. It is therefore suitable as primary  
switch in advanced high-efficiency, high-frequen-  
cy isolated DC-DC converters for Telecom and  
Computer applications. It is also intended for any  
applicationswith low gate drive requirements.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH-EFFICIENCY DC-DC CONVERTERS  
UPS AND MOTOR CONTROL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
100  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
100  
± 20  
40  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
25  
A
IDM  
(
Drain Current (pulsed)  
160  
A
)  
o
Ptot  
Total Dissipation at Tc = 25 C  
140  
W
Derating Factor  
0.93  
135  
W/oC  
mJ  
oC  
oC  
EAS(1) Single Pulse Avalanche Energy  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
() Pulse width limitedby safe operating area  
175  
( 1) starting Tj = 25 oC, ID =40A , VDD = 50V  
1/6  
May 2000  

STB40NF10 替代型号

型号 品牌 替代类型 描述 数据表
STB40NF10T4 STMICROELECTRONICS

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