Datasheet > STB40N60M2

STB40N60M2

更新时间： 2024-11-28 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
21页	1116K
描述
N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，D2PAK封装

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STB40N60M2 数据手册

STB40N60M2, STP40N60M2,

STW40N60M2

N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2

Power MOSFETs in D²PAK, TO-220 and TO-247 packages

Datasheet

−

production data

Features

TAB

Order code

V_DS@ T_JmaxR_DS(on)max

I_D

STB40N60M2

STP40N60M2

STW40N60M2

D²PAK

650 V

0.088 Ω

34 A

TO-220

• Extremely low gate charge

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

• Zener-protected

TO-247

Applications

• Switching applications

Figure 1. Internal schematic diagram

• LLC converters, resonant converters

'ꢀꢁꢂꢃ7$%ꢄ

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

*ꢀꢅꢄ

6ꢀꢆꢄ

AM01476v1

Table 1. Device summary

Order code

Marking

Packages

Packing

STB40N60M2

STP40N60M2

STW40N60M2

D²PAK

TO-220

TO-247

Tape and reel

40N60M2

Tube

August 2016

DocID024932 Rev 4

1/21

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...21

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