Datasheet > STB4080CTR

STB4080CTR

更新时间： 2024-01-13 15:28:33

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	815K
描述
DIODE ARRAY SCHOTTKY 80V D2PAK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STB4080CTR 数据手册

STB4080C

Technical Data

Data Sheet N1458, Rev. A

STB4080C SCHOTTKY RECTIFIER

Features



150C T_Joperation

Ultralow forward voltage drop

High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

High frequency operation

Guard ring for enhanced ruggedness and long term reliability

Trench MOS Schottky technology

This is a Pb − Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request



D²PAK

Circuit Diagram

Applications



Switching power supply

Converters



Free-Wheeling diodes

Reverse battery protection

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

50% duty cycle @Tc=105°C,

rectangular wave form

20(Per Leg)

40(Per Device)

Average Rectified Forward Current

(Per Device)

Peak One Cycle Non-Repetitive Surge

Current(Per Leg)

I_{F (AV)}

I_FSM

8.3ms, Half Sine pulse

300

Electrical Characteristics:

Characteristics

Symbol

Condition

Typ.

Max. Units

Forward Voltage Drop

(Per Leg) *

V_F1

0.45

0.54

0.69

@ 5A, Pulse, T_J= 25 C

@ 10A, Pulse, T_J= 25 C

@ 20A, Pulse, T_J= 25 C

@ 5A, Pulse, T_J= 125 C

@ 10A, Pulse, T_J= 125 C

@ 20A, Pulse, T_J= 125 C

@V_R= rated V_R,T_J= 25C

0.75

V_F2

0.40

0.52

0.65

0.70

Reverse Current (Per Leg) *

I_R1

I_R2

C_T

0.02

1.0

@V_R= rated V_R,T_J= 125C

Junction Capacitance(Per Leg)

@V_R= 5V, T_C= 25 C, f_SIG= 1MHz

811

* Pulse width < 300 µs, duty cycle < 2%

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

12 3 4

中文翻译

下载PDF

与STB4080CTR相关器件

型号	品牌	获取价格	描述	数据表
STB40N20	STMICROELECTRONICS	获取价格	N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET
STB40N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，
STB40NE03L20	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-263AB
STB40NE03L-20	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE
STB40NE03L-20T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-263AB
STB40NF03L	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.020 ohm - 40A D2PAK STripFET POWER MOSFET
STB40NF03LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-263AB
STB40NF10	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET
STB40NF10_07	STMICROELECTRONICS	获取价格	N-channel 100V - 0.025ヘ - 50A - D2PAK Low gat
STB40NF10-1	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/