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STB37N60DM2AG PDF预览

STB37N60DM2AG

更新时间: 2024-11-03 14:57:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 910K
描述
汽车级N沟道600 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET,D2PAK封装

STB37N60DM2AG 数据手册

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STB37N60DM2AG  
Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A  
MDmesh™ DM2 Power MOSFET in a D²PAK package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
PTOT  
TAB  
STB37N60DM2AG  
600 V  
0.110 Ω  
28 A 210 W  
Designed for automotive applications and  
AEC-Q101 qualified  
3
1
Fast-recovery body diode  
Extremely low gate charge and input  
capacitance  
2
D PAK  
Low on-resistance  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
Description  
This high voltage N-channel Power MOSFET is  
part of the MDmesh™ DM2 fast recovery diode  
series. It offers very low recovery charge (Qrr)  
and time (trr) combined with low RDS(on), rendering  
it suitable for the most demanding high efficiency  
converters and ideal for bridge topologies and  
ZVS phase-shift converters.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STB37N60DM2AG  
37N60DM2  
D²PAK  
Tape and reel  
August 2015  
DocID028271 Rev 1  
1/15  
www.st.com  
This is information on a product in full production.  

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