Datasheet > STB3N60-1

STB3N60-1

更新时间： 2024-11-01 23:34:59

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中文翻译

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数据手册

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STB3N60-1 数据手册

STB3NA60-1

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

< 4 Ω

I_D

STB3NA60-1

600 V

2.9 A

■

TYPICAL R_DS(on)= 0.7 Ω

AVALANCHE RUGGED TECHNOLOGY

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

APPLICATIONS

I2PAK

TO-262

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

600

± 30

2.9

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

1.8

_DM(•)

Drain Current (pulsed)

11.6

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.64

-65 to 150

150

W/^oC

^oC

T_stg

T_j

Storage Temperature

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/9

March 1996

12 3 4 5 6 7...9

中文翻译

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