Datasheet > STB3NC60-1

STB3NC60-1

更新时间： 2024-11-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	107K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3A I(D) \| TO-262AA

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STB3NC60-1 数据手册

STB3NC60

N - CHANNEL 600V - 3.3Ω - 3A - D PAK/I PAK

PowerMESH ΙΙ MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STB3NC60

600 V

< 3.6 Ω

3 A

TYPICAL R_DS(on)= 3.3 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

I²PAK

TO-262

(Suffix ”-1”)

D²PAK

TO-263

The PowerMESH II is the evolution of the first

generation of MESH OVERLAY . The layout

refinements introduced greatly improve the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

(Suffix ”T4”)

APPLICATIONS

INTERNAL SCHEMATIC DIAGRAM

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

600

V_DGR

V_GS

I_D

600

± 30

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

1.9

_DM(• )

P_tot

Total Dissipation at T_c= 25 ^oC

0.64

Derating Factor

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤3A, di/dt ≤ 100 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/9

February 2000

12 3 4 5 6 7...9

中文翻译

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