Datasheet > STB36N60M6

STB36N60M6

更新时间： 2024-11-03 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	996K
描述
N沟道600 V、85 mOhm典型值、30 A MDmesh M6功率MOSFET，D2PAK封装

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中文翻译

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技术参数
数据手册

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STB36N60M6 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	16 weeks	风险等级：	1.52
Base Number Matches：	1

STB36N60M6 数据手册

STB36N60M6

N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6

Power MOSFET in a D²PAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STB36N60M6

600 V

99 mΩ

30 A



Reduced switching losses

Lower R_DS(on)x area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

D PAK

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

The new MDmesh™ M6 technology incorporates

the most recent advancements to the well-known

and consolidated MDmesh family of SJ

(

)

TAB

MOSFETs. STMicroelectronics builds on the

previous generation of MDmesh devices through

its new M6 technology, which combines excellent

R_DS(on)* area improvement with one of the most

effective switching behaviors available, as well as

a user-friendly experience for maximum end-

application efficiency.

(

)

(

)

AM15572V1

Table 1: Device summary

Order code

Marking

Package

Packing

STB36N60M6

36N60M6

D²PAK

Tape and reel

March 2017

DocID027339 Rev 4

1/20

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...20

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