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STB35N65M5 PDF预览

STB35N65M5

更新时间: 2024-11-02 12:26:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
22页 1278K
描述
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

STB35N65M5 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, TO-263, D2PAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.72雪崩能效等级(Eas):800 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):27 A
最大漏极电流 (ID):27 A最大漏源导通电阻:0.098 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):108 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB35N65M5 数据手册

 浏览型号STB35N65M5的Datasheet PDF文件第2页浏览型号STB35N65M5的Datasheet PDF文件第3页浏览型号STB35N65M5的Datasheet PDF文件第4页浏览型号STB35N65M5的Datasheet PDF文件第5页浏览型号STB35N65M5的Datasheet PDF文件第6页浏览型号STB35N65M5的Datasheet PDF文件第7页 
STB35N65M5, STF35N65M5, STI35N65M5  
STP35N65M5, STW35N65M5  
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET  
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247  
Features  
VDSS  
TJMAX  
@
Type  
RDS(on) max.  
ID  
3
3
1
2
3
1
2
STB35N65M5  
STF35N65M5  
STI35N65M5  
STP35N65M5  
STW35N65M5  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.098 Ω  
< 0.098 Ω  
< 0.098 Ω  
< 0.098 Ω  
< 0.098 Ω  
27 A  
27 A(1)  
27 A  
1
PAK  
PAK  
TO-220FP  
27 A  
27 A  
1. Limited only by maximum temperature allowed  
3
3
2
2
1
1
Worldwide best R  
* area  
DS(on)  
TO-220  
TO-247  
Higher V  
rating  
DSS  
Excellent switching performance  
Easy to drive  
Figure 1.  
Internal schematic diagram  
100% avalanche tested  
High dv/dt capability  
$ꢅꢆꢇ  
Applications  
Switching applications  
'ꢅꢁꢇ  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB35N65M5  
STF35N65M5  
STI35N65M5  
STP35N65M5  
STW35N65M5  
35N65M5  
35N65M5  
35N65M5  
35N65M5  
35N65M5  
Tape and reel  
Tube  
TO-220FP  
PAK  
Tube  
TO-220  
TO-247  
Tube  
Tube  
October 2011  
Doc ID 15325 Rev 3  
1/22  
www.st.com  
22  

STB35N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STB38N65M5 STMICROELECTRONICS

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N沟道650 V、0.073 Ohm典型值、30 A MDmesh M5功率MOSFET,

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