Datasheet > STB35N65DM2

STB35N65DM2

更新时间： 2024-11-03 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	737K
描述
N沟道650 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，TO-247封装

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STB35N65DM2 数据手册

STB35N65DM2

Datasheet

N-channel 650 V, 93 mΩ typ., 32 A MDmesh DM2 Power MOSFET

in a D²PAK package

Features

TAB

DS(on)

max.

Order code

STB35N65DM2

650 V

110 mΩ

32 A

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

D²PAK

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

AM01476v1_tab

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Maturity status link

STB35N65DM2

Device summary

Order code

STB35N65DM2

Marking

Package

Packing

35N65DM2

D²PAK

Tape and reel

DS12233 - Rev 3 - October 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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