Datasheet > STB33N60M2

STB33N60M2

更新时间： 2024-11-25 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	708K
描述
N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，D2PAK封装

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中文翻译

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数据手册

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STB33N60M2 数据手册

STB33N60M2

N-channel 600 V, 0.108 Ω typ., 26 A MDmesh M2

Power MOSFET in a D²PAK package

Features

TAB

@ T max.

max.

Order code

STB33N60M2

DS(on)

650 V

0.125 Ω

26 A

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

D²

PAK

Zener-protected

D(2, TAB)

Applications

•

Switching applications

LLC converters, resonant converters

G(1)

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

S(3)

AM01475V1

Product status link

STB33N60M2

Product summary

Order code

STB33N60M2

Marking

Package

Packing

33N60M2

D²PAK

Tape and reel

DS9930 - Rev 3 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...17

中文翻译

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