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STB34N65M5 PDF预览

STB34N65M5

更新时间: 2024-11-03 14:57:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
22页 1424K
描述
N沟道650 V、0.09 Ohm典型值、28 A MDmesh M5功率MOSFET,D2PAK封装

STB34N65M5 数据手册

 浏览型号STB34N65M5的Datasheet PDF文件第2页浏览型号STB34N65M5的Datasheet PDF文件第3页浏览型号STB34N65M5的Datasheet PDF文件第4页浏览型号STB34N65M5的Datasheet PDF文件第5页浏览型号STB34N65M5的Datasheet PDF文件第6页浏览型号STB34N65M5的Datasheet PDF文件第7页 
STB34N65M5, STI34N65M5,  
STP34N65M5, STW34N65M5  
N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs  
in D2PAK, I2PAK, TO-220 and TO-247 packages  
Datasheet  
-
production data  
Features  
TAB  
TAB  
Order codes VDS @ TJmax  
RDS(on) max  
ID  
2
1
3
3
2
1
STB34N65M5  
D2PAK  
I2PAK  
STI34N65M5  
710 V  
STP34N65M5  
0.11 Ω  
28 A  
TAB  
STW34N65M5  
Worldwide best RDS(on) * area  
3
3
2
2
1
Higher VDSS rating and high dv/dt capability  
Excellent switching performance  
100% avalanche tested  
1
TO-220  
TO-247  
Figure 1. Internal schematic diagram  
Applications  
$ꢅꢆꢇ  
Switching applications  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1. Device summary  
Order codes  
Marking  
Packages  
Packaging  
STB34N65M5  
STI34N65M5  
STP34N65M5  
STW34N65M5  
D2PAK  
I2PAK  
Tape and reel  
34N65M5  
TO-220  
TO-247  
Tube  
October 2013  
DocID022853 Rev 3  
1/22  
This is information on a product in full production.  
www.st.com  
 
 

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