Datasheet > STB33N65M2

STB33N65M2

更新时间： 2024-11-03 14:57:23

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
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描述
N沟道650 V、0.117 Ohm典型值、24 A MDmesh M2功率MOSFET，D2PAK封装

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中文翻译

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数据手册

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STB33N65M2 数据手册

STB33N65M2, STF33N65M2,

STP33N65M2, STI33N65M2

N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2

Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages

Datasheet

production data

Features

7$%

R_DS(on)

max

Order codes

V_DS

I_D

STB33N65M2

STF33N65M2

STP33N65M2

STI33N65M2

ꢁ

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650 V

0.14 Ω

24 A

7$%

• Extremely low gate charge

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

ꢁ

ꢂ

ꢁ

ꢀ

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72ꢁꢀꢀꢂ

• Zener-protected

Applications

Figure 1. Internal schematic diagram

• Switching applications

, TAB

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

AM15572v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB33N65M2

STF33N65M2

STP33N65M2

STI33N65M2

D²PAK

TO-220FP

TO-220

I²PAK

Tape and reel

33N65M2

Tube

December 2014

DocID027286 Rev 1

1/23

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...23

中文翻译

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