Datasheet > STB34N50DM2AG

STB34N50DM2AG

更新时间： 2024-11-21 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	914K
描述
汽车级N沟道500 V、0.10 Ohm典型值、26 A MDmesh DM2功率MOSFET，D2PAK封装

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STB34N50DM2AG 数据手册

STB34N50DM2AG

Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A

MDmesh™ DM2 Power MOSFET in a D²PAK package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

TAB

STB34N50DM2AG 500 V

0.12 Ω

26 A 190 W



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode

Extremely low gate charge and input

capacitance

D PAK



Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB34N50DM2AG

34N50DM2

D²PAK

Tape and reel

August 2015

DocID028248 Rev 1

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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