Datasheet > STB33N60DM6

STB33N60DM6

更新时间： 2024-11-25 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	420K
描述
N沟道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，D2PAK封装

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STB33N60DM6 数据手册

STB33N60DM6

Datasheet

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET

in a D²PAK package

Features

TAB

DS(on)

max.

Order code

STB33N60DM6

600 V

128 mΩ

25 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

D²

PAK

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB33N60DM6

Product summary

Order code

STB33N60DM6

33N60DM6

Marking

Package

Packing

D PAK

Tape and reel

DS12904 - Rev 2 - July 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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