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STB30NF20 PDF预览

STB30NF20

更新时间: 2024-11-01 04:02:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体栅极晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
16页 391K
描述
N-channel 200V - 0.065ヘ - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET⑩ Power MOSFET

STB30NF20 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:12 weeks风险等级:1.69
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:424652Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:STB40NF10LT4-1Samacsys Released Date:2019-04-26 14:20:20
Is Samacsys:N雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB30NF20 数据手册

 浏览型号STB30NF20的Datasheet PDF文件第2页浏览型号STB30NF20的Datasheet PDF文件第3页浏览型号STB30NF20的Datasheet PDF文件第4页浏览型号STB30NF20的Datasheet PDF文件第5页浏览型号STB30NF20的Datasheet PDF文件第6页浏览型号STB30NF20的Datasheet PDF文件第7页 
STP30NF20 - STB30NF20  
STW30NF20  
N-channel 200V - 0.065- 30A - TO-220/TO-247/D2PAK  
Low gate charge STripFET™ Power MOSFET  
Features  
Type  
VDSS RDS(on)  
ID  
PTOT  
STP30NF20  
STW30NF20  
STB30NF20  
200V  
200V  
200V  
0.075Ω  
0.075Ω  
0.075Ω  
30A  
30A  
30A  
125W  
125W  
125W  
3
3
2
2
1
1
TO-247  
3
TO-220  
Gate charge minimized  
100% avalanche tested  
1
PAK  
Excellent figure of merit (R *Q )  
DS  
g
Very good manufactuing repeability  
Very low intrinsic capacitances  
Application  
Figure 1.  
Internal schematic diagram  
Switching applications  
Description  
This Power MOSFET series realized with  
STMicroelectronics unique STripFET process has  
specifically been designed to minimize input  
capacitance and gate charge. It is therefore  
suitable as primary switch in advanced high-  
efficiency isolated DC-DC converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
TO-220  
Packaging  
STP30NF20  
STW30NF20  
STB30NF20  
30NF20  
30NF20  
30NF20  
Tube  
Tube  
TO-247  
PAK  
Tape & reel  
October 2007  
Rev 2  
1/16  
www.st.com  
16  

STB30NF20 替代型号

型号 品牌 替代类型 描述 数据表
FQB34N20LTM FAIRCHILD

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