Datasheet > STB31N65M5

STB31N65M5

更新时间： 2024-11-03 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
29页	1126K
描述
N沟道650 V、0.124 Ohm典型值、22 A MDmesh M5功率MOSFET，D2PAK封装

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中文翻译

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STB31N65M5 数据手册

STB31N65M5, STF31N65M5

STP31N65M5, STW31N65M5

Datasheet

N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D²PAK,

TO‑220FP, TO‑220 and TO-247 packages

Features

TAB

@ T

max.

Order code

Package

JMAX

DS(on )

D²PAK

STB31N65M5

STF31N65M5

STP31N65M5

STW31N65M5

D PAK

TO-220FP

TO-220

TAB

710 V

0.148 Ω

22 A

TO-247

TO-220

TO-247

•

Extremely low R_DS(on)

Low gate charge and input capacitance

Excellent switching performance

100% avalanche tested

D(2, TAB)

Applications

G(1)

•

Switching applications

S(3)

Description

AM01475v1_noZen

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative

vertical process technology combined with the well-known PowerMESH horizontal

layout. The resulting products offer extremely low on-resistance, making them

particularly suitable for applications requiring high power and superior efficiency.

Product status link

STB31N65M5

STF31N65M5

STP31N65M5

STW31N65M5

DS8912 - Rev 4 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...29

中文翻译

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