Datasheet > STB30NS15T4

STB30NS15T4

更新时间： 2024-11-19 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	149K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 30A I(D) \| TO-263AB

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STB30NS15T4 数据手册

STB30NS15

N-CHANNEL 150V - 0.075 Ω - 30A D PAK

LOW GATE CHARGE STripFET POWER MOSFET

TYPE

DSS

DS(on)

STB30NS15

150 V

<0.1 Ω

30 A

■

TYPICAL R (on) = 0.075 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

■

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D PAK

TO-263

(Suffix “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH-EFFICIENCY DC-DC CONVERTERS

■

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

150

± 20

Unit

Drain-source Voltage (V

= 0)

= 20 kΩ)

Drain-gate Voltage (R

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(•)

Drain Current (pulsed)

120

110

0.73

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

(2)

dv/dt

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

250

stg

-55 to 175

°C

Max. Operating Junction Temperature

•) Pulse width limited by safe operating area.

(1) I

≤ 30A, di/dt ≤ 100A/µs, V

≤ V

, T ≤ T

(BR)DSS

JMAX.

(2) Starting T = 25 C, I = 15A, V

= 25V

October 2001

1/9

12 3 4 5 6 7...9

中文翻译

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