Datasheet > STB30NE06LT4

STB30NE06LT4

更新时间： 2024-02-27 22:54:54

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	49K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-263AB

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数据手册

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STB30NE06LT4 数据手册

STB30NE06L

N-CHANNEL 60V - 0.35

Ω - 30A D PAK

STripFET POWER MOSFET

DS(on)

TYPE

DSS

STB30NE06L

60 V

<0.05 Ω

30 A

■

TYPICAL R (on) = 0.035Ω

100% AVALANCHE TESTED

LOW GATE CHARGE 100 C

APPLICATION ORIENTED

CHARACTERIZATION

■

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D PAK

TO-263

(suffix“T4”)

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronis unique ”Single Feature Size ” strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

INTERNAL SCHEMATIC DIAGRAM

steps

therefore

remarkable

manufacturing

reproducibility.

APPLICATIONS

■

DC MOTOR CONTROL

■

DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

±20

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(•)

Drain Current (pulsed)

120

Total Dissipation at T = 25°C

tot

Derating Factor

0.53

–60 to 175

175

W/°C

°C

stg

Storage Temperature

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area.

November 2000

1/6

12 3 4 5 6

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