Datasheet > STP28N65M2

STP28N65M2

更新时间： 2024-11-24 14:57:19

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-220封装

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替代型号

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STP28N65M2 数据手册

STB28N65M2, STF28N65M2,

STP28N65M2, STW28N65M2

N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs

in D²PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet

preliminary data

Features

TAB

Order codes

V_DS

R_DS(on)max

I_D

STB28N65M2

STF28N65M2

STP28N65M2

STW28N65M2

650 V

0.18 Ω

20 A

D²PAK

TO-220FP

TAB

• Extremely low gate charge

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

• Zener-protected

TO-220

TO-247

Applications

Figure 1. Internal schematic diagram

, TAB

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

AM15572v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB28N65M2

STF28N65M2

STP28N65M2

STW28N65M2

D²PAK

TO-220FP

TO-220

Tape and reel

28N65M2

Tube

TO-247

December 2014

DocID027256 Rev 1

1/22

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...22

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STP28N65M2 替代型号

型号	品牌	替代类型	描述	数据表
STB28N65M2	STMICROELECTRONICS	完全替代	N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，D
TK20E60U	TOSHIBA	功能相似	Switching Voltage Regulators

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