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STP2NC60FP PDF预览

STP2NC60FP

更新时间: 2024-01-18 00:14:54
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 336K
描述
N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET

STP2NC60FP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220FP包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.64Is Samacsys:N
雪崩能效等级(Eas):80 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):1.9 A最大漏极电流 (ID):1.9 A
最大漏源导通电阻:8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):7.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP2NC60FP 数据手册

 浏览型号STP2NC60FP的Datasheet PDF文件第2页浏览型号STP2NC60FP的Datasheet PDF文件第3页浏览型号STP2NC60FP的Datasheet PDF文件第4页浏览型号STP2NC60FP的Datasheet PDF文件第5页浏览型号STP2NC60FP的Datasheet PDF文件第6页浏览型号STP2NC60FP的Datasheet PDF文件第7页 
STP2NC60  
STP2NC60FP  
N-CHANNEL 600V - 7- 1.9A - TO-220/TO-220FP  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP2NC60  
STP2NC60FP  
600 V  
600 V  
< 8 Ω  
< 8 Ω  
1.9 A  
1.9 A  
TYPICAL R (on) = 7 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
3
2
2
1
1
TO-220  
TO-220FP  
DESCRIPTION  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP2NC60FP  
Unit  
STP2NC60  
V
Drain-source Voltage (V = 0)  
600  
600  
±30  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
1.9  
1.2  
7.4  
70  
1.9 (*)  
1.2 (*)  
7.4 (*)  
30  
A
D
C
I
Drain Current (continuos) at T = 100°C  
A
D
C
I
(1)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
0.56  
0.24  
W/°C  
V/ns  
V
dv/dt  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
Storage Temperature  
3.5  
V
ISO  
-
2000  
T
stg  
–60 to 150  
150  
°C  
°C  
T
Max. Operating Junction Temperature  
j
(1)I 1.9A, di/dt 100A/µs, V V  
, T T  
j JMAX  
(•)Pulse width limited by safe operating area  
SD  
DD  
(BR)DSS  
(*) Limited only by Maximum Temperature Allowed  
.
April 2001  
1/9  

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