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STP3015L PDF预览

STP3015L

更新时间: 2024-01-31 03:45:22
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 63K
描述
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

STP3015L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):40 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP3015L 数据手册

 浏览型号STP3015L的Datasheet PDF文件第2页浏览型号STP3015L的Datasheet PDF文件第3页浏览型号STP3015L的Datasheet PDF文件第4页浏览型号STP3015L的Datasheet PDF文件第5页浏览型号STP3015L的Datasheet PDF文件第6页 
STB3015L  
STP3015L  
®
2
N - CHANNEL 30V - 0.013 - 40A - D PAK/TO-220  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STB3015L  
30 V  
< 0.0155 Ω  
40 A  
TYPICAL RDS(on) = 0.013 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
LOW GATE CHARGE A 100oC  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
1
3
D2PAK  
TO-263  
2
FOR THROUGH-HOLE VERSION  
CONTACT SALES OFFICE  
1
(Suffix "T4")  
TO-220  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronics unique " Single Feature  
Size " strip-based process. The resulting tran-  
sistor shows extremely high packing density for  
low on-resistance, rugged avalanche charac-  
teristics and less critical alignment steps therefore  
a remarkable manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS IN HIGH  
PERFORMANCE VRMs  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
30  
V
± 20  
40  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
28  
A
I
DM()  
Drain Current (pulsed)  
160  
80  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.53  
7
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 175  
Tj  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 40 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/5  
July 1998  

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