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STP31N65M5 PDF预览

STP31N65M5

更新时间: 2024-11-24 14:57:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
29页 1126K
描述
N沟道650 V、0.124 Ohm典型值、22 A MDmesh M5功率MOSFET,TO-220封装

STP31N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:2.28
配置:Single最大漏极电流 (Abs) (ID):22 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W子类别:FET General Purpose Powers
表面贴装:NO处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STP31N65M5 数据手册

 浏览型号STP31N65M5的Datasheet PDF文件第2页浏览型号STP31N65M5的Datasheet PDF文件第3页浏览型号STP31N65M5的Datasheet PDF文件第4页浏览型号STP31N65M5的Datasheet PDF文件第5页浏览型号STP31N65M5的Datasheet PDF文件第6页浏览型号STP31N65M5的Datasheet PDF文件第7页 
STB31N65M5, STF31N65M5  
STP31N65M5, STW31N65M5  
Datasheet  
N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK,  
TO220FP, TO220 and TO-247 packages  
Features  
TAB  
V
@ T  
R
max.  
I
D
Order code  
Package  
DS  
JMAX  
DS(on )  
3
1
3
2
D2PAK  
2
STB31N65M5  
STF31N65M5  
STP31N65M5  
STW31N65M5  
D PAK  
1
TO-220FP  
TO-220FP  
TO-220  
TAB  
710 V  
0.148 Ω  
22 A  
TO-247  
3
3
2
1
TO-220  
2
TO-247  
1
Extremely low RDS(on)  
Low gate charge and input capacitance  
Excellent switching performance  
100% avalanche tested  
D(2, TAB)  
Applications  
G(1)  
Switching applications  
S(3)  
Description  
AM01475v1_noZen  
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative  
vertical process technology combined with the well-known PowerMESH horizontal  
layout. The resulting products offer extremely low on-resistance, making them  
particularly suitable for applications requiring high power and superior efficiency.  
Product status link  
STB31N65M5  
STF31N65M5  
STP31N65M5  
STW31N65M5  
DS8912 - Rev 4 - April 2019  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

STP31N65M5 替代型号

型号 品牌 替代类型 描述 数据表
SIHP24N65E-GE3 VISHAY

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