品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
29页 | 1126K | |
描述 | ||
N沟道650 V、0.124 Ohm典型值、22 A MDmesh M5功率MOSFET,TO-220封装 |
是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 17 weeks | 风险等级: | 2.28 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 22 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高工作温度: | 150 °C |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 子类别: | FET General Purpose Powers |
表面贴装: | NO | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
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